联系人: 蒋亦岚
邮箱: jiangyl1@shanghaitech.edu.cn
主要规格和技术参数:
肖特基浸没式场发射高分辨扫描电镜 分辨率：0.7nm（15kV）,0.7nm（1kV）,3.0nm（5kV、WD10MM、5nA）
主要功能及特色:
1. In-lens Schottky Plus Field Emission Electron Gun: Maximum Beam Current: 20 nA 2kV / 500 nA 30 kV
2. Super Hybrid Lens (SHL)
3. Gentle Beam Super High Resolution (GBSH):Maximum sample bias voltage: -5 kV
4.Back Scattered Electron detector: RBEI detector (retractable)
5.Chamber Camera: CMOS camera system
6.Low Vacuum with secondary electron detector for LV
主要附件及配置:
1.Oxford EDS: X-Max Extreme 2. Electron Beam Lithography system:Raith ELPHY Quantum
